BUZ102SL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Qualification Status :

COMMERCIAL

Package :

Bulk

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

90 nC @ 10 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Terminal Finish :

TIN LEAD

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Series :

SIPMOS®

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Power Dissipation (Max) :

120W (Tc)

Drain to Source Voltage (Vdss) :

55 V

Number of Elements :

1

Vgs (Max) :

±14V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

47A (Tc)

Operating Temperature :

-55°C ~ 175°C (TJ)

Number of Terminals :

3

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2V @ 90µA

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.024 Ω

Rds On (Max) @ Id, Vgs :

18mOhm @ 33A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

188 A

Product Status :

Active

Avalanche Energy Rating (Eas) :

245 mJ

Transistor Element Material :

SILICON

FET Feature :

-

Manufacturer :

Rochester Electronics LLC

JESD-30 Code :

R-PSFM-T3

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

TO-220AB

DS Breakdown Voltage-Min :

55 V

Pbfree Code :

No

JESD-609 Code :

e0

Input Capacitance (Ciss) (Max) @ Vds :

1730 pF @ 25 V