BUZ101SL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS?

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.07 Ω

Avalanche Energy Rating (Eas) :

90 mJ

Manufacturer :

Rochester Electronics LLC

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Power Dissipation (Max) :

55W (Tc)

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

80 A

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

700 pF @ 25 V

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

DS Breakdown Voltage-Min :

55 V

Drain to Source Voltage (Vdss) :

55 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Vgs(th) (Max) @ Id :

2V @ 40µA

Operating Mode :

ENHANCEMENT MODE

FET Feature :

-

Number of Elements :

1

Pin Count :

3

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Rds On (Max) @ Id, Vgs :

40mOhm @ 14A, 10V

Gate Charge (Qg) (Max) @ Vgs :

36 nC @ 10 V

Vgs (Max) :

±14V

Qualification Status :

COMMERCIAL

Supplier Device Package :

PG-TO220-3-1

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Package :

Bulk

Terminal Form :

THROUGH-HOLE

JEDEC-95 Code :

TO-220AB