BULD742CT4
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- Mfr.Part #
- BULD742CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A DPAK
- Stock
- 9,799
- In Stock ：
- 9,799
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 800mA 3V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 45W
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 4A
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 15V
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 400V
- Base Part Number :
- BULD742
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 45W
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Breakdown Voltage :
- 400V
- Max Breakdown Voltage :
- 400V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 250μA
- Datasheets
- BULD742CT4
BULD742CT4 Documents
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NPN 150°C TJ 250μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
BULD742CT4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 800mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 3.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 15V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 4A volts.
BULD742CT4 Features
the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
BULD742CT4 Applications
There are a lot of STMicroelectronics
BULD742CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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