BULD742CT4
- Mfr.Part #
- BULD742CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A DPAK
- Stock
- 9,799
- In Stock :
- 9,799
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 800mA 3V
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 250μA
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Max Collector Current :
- 4A
- Power Dissipation :
- 45W
- Collector Emitter Breakdown Voltage :
- 400V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 15V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 400V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 45W
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BULD742
- Datasheets
- BULD742CT4
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NPN 150°C TJ 250μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
BULD742CT4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 800mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 3.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 15V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 4A volts.
BULD742CT4 Features
the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
BULD742CT4 Applications
There are a lot of STMicroelectronics
BULD742CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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