BULD118D-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA 5V

Additional Feature :

High Reliability

Power Dissipation :

20W

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Max Collector Current :

2A

Emitter Base Voltage (VEBO) :

9V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

400V

Time@Peak Reflow Temperature-Max (s) :

30

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Mount :

Through Hole

Number of Pins :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

250μA

Collector Emitter Breakdown Voltage :

400V

Terminal Position :

Single

Number of Terminations :

3

Collector Base Voltage (VCBO) :

700V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 400mA, 2A

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Tube

Max Power Dissipation :

20W

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Base Part Number :

BULD118

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Radiation Hardening :

No

Contact Plating :

Tin

Turn Off Time-Max (toff) :

4900ns