BULD118D-1

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Mfr.Part #
BULD118D-1
Manufacturer
STMicroelectronics
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 400V 2A TO251
Stock
4,997
In Stock :
4,997

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
400V
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Through Hole
Base Part Number :
BULD118
Collector Emitter Breakdown Voltage :
400V
Number of Terminations :
3
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
9V
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
30
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Max Collector Current :
2A
Collector Base Voltage (VCBO) :
700V
Pin Count :
3
Turn Off Time-Max (toff) :
4900ns
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 400mA, 2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
250μA
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Power Dissipation :
20W
JESD-609 Code :
e3
Configuration :
SINGLE WITH BUILT-IN DIODE
Contact Plating :
Tin
Operating Temperature :
150°C TJ
Factory Lead Time :
8 Weeks
Terminal Position :
Single
Mount :
Through Hole
Additional Feature :
High Reliability
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 500mA 5V
Number of Elements :
1
ECCN Code :
EAR99
Max Power Dissipation :
20W
Transistor Application :
SWITCHING
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULD118D-1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BULD118, Number of Terminations:3, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:150°C TJ, BULD118D-1 pinout, BULD118D-1 datasheet PDF, BULD118D-1 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULD118D-1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULD118D-1


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole

BULD118D-1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 500mA 5V.When VCE saturation is 1.5V @ 400mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.

BULD118D-1 Features


the DC current gain for this device is 10 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 9V


BULD118D-1 Applications


There are a lot of STMicroelectronics
BULD118D-1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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