BUL810

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Mfr.Part #
BUL810
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 450V 15A TO247-3
Stock
292
In Stock :
292

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
9V
Current Rating :
15A
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Pin Count :
3
Mount :
Through Hole
hFE Min :
10
Pbfree Code :
yes
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
5V @ 2.4A, 12A
RoHS Status :
ROHS3 Compliant
Power Dissipation :
125W
Collector Base Voltage (VCBO) :
1kV
Collector Emitter Breakdown Voltage :
450V
Max Power Dissipation :
125W
Length :
15.75mm
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1V
Max Collector Current :
15A
Width :
5.15mm
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Lead Free :
Lead Free
Height :
20.15mm
Base Part Number :
BUL810
Weight :
4.535924g
Current - Collector Cutoff (Max) :
250μA
Voltage - Rated DC :
450V
Packaging :
Tube
VCEsat-Max :
5 V
Transistor Type :
NPN
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
450V
Package / Case :
TO-247-3
REACH SVHC :
No SVHC
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 5A 5V
JESD-609 Code :
e3
Datasheets
BUL810
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL810 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:BUL810, Operating Temperature:150°C TJ, Package / Case:TO-247-3, Number of Pins:3, BUL810 pinout, BUL810 datasheet PDF, BUL810 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL810 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL810


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole

BUL810 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 2.4A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.Collector current can be as low as 15A volts at its maximum.

BUL810 Features


the DC current gain for this device is 10 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 2.4A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 15A


BUL810 Applications


There are a lot of STMicroelectronics
BUL810 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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