BUL805
- Mfr.Part #
- BUL805
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220
- Stock
- 1,860
- In Stock :
- 1,860
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 800V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 2A 5V
- Number of Terminations :
- 3
- Max Collector Current :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 10
- Collector Emitter Breakdown Voltage :
- 450V
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 250μA
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 450V
- Power Dissipation :
- 80W
- Max Power Dissipation :
- 80W
- Pin Count :
- 3
- Base Part Number :
- BUL805
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 600mA, 3A
- Datasheets
- BUL805
BUL805 Documents

NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL805 Overview
In this device, the DC current gain is 10 @ 2A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 600mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
BUL805 Features
the DC current gain for this device is 10 @ 2A 5V
the vce saturation(Max) is 800mV @ 600mA, 3A
the emitter base voltage is kept at 9V
BUL805 Applications
There are a lot of STMicroelectronics
BUL805 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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