BUL213

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

16

Collector Emitter Breakdown Voltage :

600V

Power Dissipation :

60W

Voltage - Rated DC :

600V

Number of Elements :

1

Number of Pins :

3

Mount :

Through Hole

ECCN Code :

EAR99

Pin Count :

3

Collector Emitter Voltage (VCEO) :

600V

Number of Terminations :

3

Base Part Number :

BUL213

Vce Saturation (Max) @ Ib, Ic :

900mV @ 200mA, 1A

Max Power Dissipation :

60W

Lead Free :

Lead Free

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

16 @ 350mA 3V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

Emitter Base Voltage (VEBO) :

9V

Max Collector Current :

3A

JEDEC-95 Code :

TO-220AB

Collector Base Voltage (VCBO) :

1.3kV

Current Rating :

3A

Turn Off Time-Max (toff) :

6420ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Additional Feature :

High Reliability

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

250μA

REACH SVHC :

No SVHC

Transistor Type :

NPN

Packaging :

Tube