BUL216
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- Mfr.Part #
- BUL216
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 4A TO220
- Stock
- 147
- In Stock ：
- 147
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 90W
- Collector Emitter Voltage (VCEO) :
- 800V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 660mA, 2A
- Collector Emitter Breakdown Voltage :
- 800V
- Number of Terminations :
- 3
- Height :
- 9.15mm
- Turn Off Time-Max (toff) :
- 4020ns
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Saturation Voltage :
- 1V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Width :
- 4.6mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 400mA 5V
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 800V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 1.6kV
- VCEsat-Max :
- 3 V
- Weight :
- 90.718474mg
- Length :
- 10.4mm
- Current - Collector Cutoff (Max) :
- 250μA
- Current Rating :
- 4A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- hFE Min :
- 12
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Base Part Number :
- BUL216
- Emitter Base Voltage (VEBO) :
- 9V
- Power Dissipation :
- 90W
- Number of Elements :
- 1
- Datasheets
- BUL216
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL216 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUL213 | STMicroelectronics | 11,724 | TRANS NPN 600V 3A TO220 |
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