BUK9K5R1-30EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

26.7nC @ 5V

Case Connection :

DRAIN

Pin Count :

8

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Power - Max :

68W

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

329A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 10A, 5V

Number of Elements :

2

Package / Case :

SOT-1205, 8-LFPAK56

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

68W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.0053Ohm

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G6

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3065pF @ 25V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

40A

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

4