BUK9209-40B118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

15V

Pin Count :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Lead Free :

Lead Free

Rise Time :

106ns

Input Capacitance (Ciss) (Max) @ Vds :

3619pF @ 25V

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Number of Terminations :

2

Fall Time (Typ) :

89 ns

Packaging :

Tape and Reel (TR)

HTS Code :

8541.29.00.75

Power Dissipation-Max :

167W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Series :

Automotive, AEC-Q101, TrenchMOS™

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.01Ohm

Vgs (Max) :

±15V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

Turn-Off Delay Time :

108 ns

Turn On Delay Time :

29 ns

Mounting Type :

Surface Mount

Number of Elements :

1

Max Dual Supply Voltage :

40V

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

167W

Continuous Drain Current (ID) :

99A

Drain Current-Max (Abs) (ID) :

75A

Contact Plating :

Tin

Surface Mount :

yes

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Temperature :

-55°C~185°C TJ

Published :

2010

Factory Lead Time :

26 Weeks

Avalanche Energy Rating (Eas) :

240 mJ

Number of Pins :

3