BUK9K52-60E,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

11.9 mJ

JESD-30 Code :

R-PSSO-G4

Reach Compliance Code :

not_compliant

Package / Case :

SOT-1205, 8-LFPAK56

Number of Pins :

8

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

16A

FET Feature :

Logic Level Gate

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

60V

Contact Plating :

Tin

Terminal Position :

Single

Published :

2014

Transistor Element Material :

SILICON

Turn-Off Delay Time :

10.7 ns

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

10V

Power Dissipation :

32W

Series :

Automotive, AEC-Q101, TrenchMOS™

Pulsed Drain Current-Max (IDM) :

64A

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

9 ns

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Rise Time :

10.1ns

Time@Peak Reflow Temperature-Max (s) :

20

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

32W

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

AEC-Q101; IEC-60134

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.055Ohm

Rds On (Max) @ Id, Vgs :

49m Ω @ 5A, 10V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pin Count :

8

Number of Terminations :

4

Turn On Delay Time :

6.2 ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

725pF @ 25V

Number of Channels :

2

Element Configuration :

Dual