BUK9K35-60E,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Contact Plating :

Tin

Drain-source On Resistance-Max :

0.035Ohm

Max Dual Supply Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

20.5 ns

Continuous Drain Current (ID) :

22A

Input Capacitance (Ciss) (Max) @ Vds :

1081pF @ 25V

Power Dissipation :

38W

Reference Standard :

AEC-Q101; IEC-60134

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

32m Ω @ 5A, 10V

Avalanche Energy Rating (Eas) :

19.5 mJ

Vgs(th) (Max) @ Id :

2.1V @ 1mA

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Published :

2014

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Number of Terminations :

6

Turn-Off Delay Time :

3.9 ns

Transistor Application :

SWITCHING

Number of Elements :

2

JESD-30 Code :

R-PDSO-G6

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

10V

Number of Channels :

2

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-1205, 8-LFPAK56

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Series :

Automotive, AEC-Q101, TrenchMOS™

Pulsed Drain Current-Max (IDM) :

90A

Rise Time :

3.7ns

Max Power Dissipation :

38W

FET Type :

2 N-Channel (Dual)