BUK9K32-100EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Rise Time :

22ns

Case Connection :

DRAIN

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.1V @ 1mA

FET Type :

2 N-Channel (Dual)

Avalanche Energy Rating (Eas) :

74 mJ

Package / Case :

SOT-1205, 8-LFPAK56

Rds On (Max) @ Id, Vgs :

31m Ω @ 5A, 10V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

106A

Drain-source On Resistance-Max :

0.033Ohm

Series :

TrenchMOS™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

23.1 ns

Gate Charge (Qg) (Max) @ Vgs :

27.3nC @ 5V

Number of Channels :

2

Drain to Source Voltage (Vdss) :

100V

Gate to Source Voltage (Vgs) :

15V

Pin Count :

8

Mounting Type :

Surface Mount

Turn-Off Delay Time :

39.5 ns

JESD-30 Code :

R-PSSO-G4

Continuous Drain Current (ID) :

26A

Input Capacitance (Ciss) (Max) @ Vds :

3168pF @ 25V

Published :

2013

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Element Configuration :

Dual

Max Power Dissipation :

64W

Number of Elements :

2

Turn On Delay Time :

12.6 ns

Reference Standard :

AEC-Q101; IEC-60134

Number of Terminations :

4

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)