BUK9K17-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.1V @ 1mA

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

15.6m Ω @ 10A, 10V

Power - Max :

53W

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

64 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Drain-source On Resistance-Max :

0.017Ohm

Max Power Dissipation :

53W

Mount :

Surface Mount

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2223pF @ 25V

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-1205, 8-LFPAK56

Pin Count :

8

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 5V

Continuous Drain Current (ID) :

26A

Published :

2014

Reference Standard :

AEC-Q101; IEC-60134

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Number of Pins :

8

Number of Elements :

2

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G6

Case Connection :

DRAIN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing