BUK9K13-60EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.0125Ohm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

190A

Number of Pins :

8

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Max Power Dissipation :

64W

Input Capacitance (Ciss) (Max) @ Vds :

2953pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Reference Standard :

AEC-Q101; IEC-60134

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 10A, 5V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

22.4nC @ 5V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Continuous Drain Current (ID) :

40A

JESD-30 Code :

R-PDSO-G6

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Published :

2013

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pin Count :

8

DS Breakdown Voltage-Min :

60V

Package / Case :

SOT-1205, 8-LFPAK56

Power - Max :

64W

Factory Lead Time :

12 Weeks