BUK9K13-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

22.4nC @ 5V

Operating Temperature :

-55°C~175°C TJ

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0125Ohm

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

40A

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

6

Package / Case :

SOT-1205, 8-LFPAK56

JESD-30 Code :

R-PDSO-G6

Power - Max :

64W

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 10A, 5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reference Standard :

AEC-Q101; IEC-60134

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Published :

2013

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

2953pF @ 25V

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

190A

Pin Count :

8

Transistor Element Material :

SILICON

Max Power Dissipation :

64W