BUK7K6R2-40EX
- Mfr.Part #
- BUK7K6R2-40EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1205, 8-LFPAK56
- Datasheet
- Download
- Description
- MOSFET 2N-CH 40V 40A 56LFPAK
- Stock
- 17,056
- In Stock :
- 17,056
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Published :
- 2013
- Fall Time (Typ) :
- 17 ns
- Packaging :
- Tape and Reel (TR)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 40V
- Turn On Delay Time :
- 9.5 ns
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 68W
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 21 ns
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Dual
- FET Feature :
- Standard
- Reference Standard :
- AEC-Q101; IEC-60134
- Gate Charge (Qg) (Max) @ Vgs :
- 32.3nC @ 10V
- Mount :
- Surface Mount
- Number of Elements :
- 2
- Pin Count :
- 8
- Number of Terminations :
- 6
- Rise Time :
- 16ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-1205, 8-LFPAK56
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 20A, 10V
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 157 mJ
- Transistor Element Material :
- SILICON
- FET Type :
- 2 N-Channel (Dual)
- Number of Channels :
- 2
- Drain to Source Breakdown Voltage :
- 40V
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PDSO-G6
- Datasheets
- BUK7K6R2-40EX

BUK7K6R2-40EX datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available at
BUK7K6R2-40EX Description
The BUK7K6R2-40EX is a Dual N-channel 40 V, 5.8 mΩ standard level MOSFET. TrenchMOS-based dual standard level N-channel MOSFETs in an LFPAK56D (Dual Power-SO8) package. To meet the requirements of AEC Q101, this product has been designed and certified for use in high performance automotive applications.
BUK7K6R2-40EX Features
-
Repetitive avalanche rated
-
Suitable for thermally demanding environments due to 175 °C rating
-
True standard level gate with VGS(th) of greater than 1 V at 175 °C
-
Dual MOSFET
-
Q101 compliant
BUK7K6R2-40EX Applications
-
Transmission control
-
Ultra high performance power switching
-
12 V Automotive systems
-
Motors, lamps and solenoid control
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