BUK7K5R6-30E,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Pulsed Drain Current-Max (IDM) :

314A

Turn On Delay Time :

9.2 ns

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-1205, 8-LFPAK56

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Terminations :

6

Drain-source On Resistance-Max :

0.0056Ohm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1969pF @ 25V

Max Power Dissipation :

64W

JESD-30 Code :

R-PDSO-G6

Vgs(th) (Max) @ Id :

4V @ 1mA

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Published :

2013

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

17.9 ns

Fall Time (Typ) :

12.9 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Number of Pins :

8

Contact Plating :

Tin

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

29.7nC @ 10V

Rise Time :

10ns

Continuous Drain Current (ID) :

40A

Transistor Element Material :

SILICON

Pin Count :

8

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Reference Standard :

AEC-Q101; IEC-60134

Reach Compliance Code :

not_compliant

Power - Max :

64W

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V