BUK7K45-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1533pF @ 25V

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

25.9nC @ 10V

Reference Standard :

AEC-Q101; IEC-60134

Max Power Dissipation :

53W

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

46 mJ

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

37.6m Ω @ 5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2015

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Package / Case :

SOT-1205, 8-LFPAK56

Power - Max :

53W

JESD-30 Code :

R-PDSO-G6

Mount :

Surface Mount

Number of Elements :

2

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0376Ohm

Continuous Drain Current (ID) :

21.4A