BUK7K17-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-PSSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

14m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current (ID) :

30A

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Package / Case :

SOT-1205, 8-LFPAK56

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

55 mJ

Number of Channels :

2

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

60V

FET Feature :

Standard

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1578pF @ 25V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

23.6nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2013

Terminal Position :

Single

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.014Ohm

Mounting Type :

Surface Mount

Number of Terminations :

4

Pin Count :

8

Number of Elements :

2

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Pins :

8

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Max Power Dissipation :

53W

Pulsed Drain Current-Max (IDM) :

164A

Reference Standard :

AEC-Q101; IEC-60134

Terminal Form :

Gull wing

Transistor Element Material :

SILICON