BUK7K134-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

10.9 mJ

Power - Max :

32W

Case Connection :

DRAIN

Continuous Drain Current (ID) :

9.8A

Max Power Dissipation :

32W

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

121m Ω @ 5A, 10V

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

39A

Drain-source On Resistance-Max :

0.121Ohm

JESD-30 Code :

R-PDSO-G6

Vgs(th) (Max) @ Id :

4V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

564pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~175°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

FET Feature :

Standard

DS Breakdown Voltage-Min :

100V

Number of Terminations :

6

Package / Case :

SOT-1205, 8-LFPAK56

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

AEC-Q101; IEC-60134

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Published :

2013