BUK7K13-60EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

2163pF @ 25V

Drain-source On Resistance-Max :

0.01Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

SOT-1205, 8-LFPAK56

Pin Count :

8

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Max Power Dissipation :

64W

FET Feature :

Standard

Number of Elements :

2

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2015

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

64W

Mount :

Surface Mount

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

10m Ω @ 10A, 10V

Number of Pins :

8

Reference Standard :

AEC-Q101; IEC-60134

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

60V

FET Type :

2 N-Channel (Dual)

Pulsed Drain Current-Max (IDM) :

213A

Continuous Drain Current (ID) :

40A

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

30.1nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount