BUK7230-55A
- Mfr.Part #
- BUK7230-55A
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- PFET, 38A I(D), 55V, 0.003OHM, 1
- Stock
- 49,819
- In Stock :
- 49,819
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Power Dissipation :
- 88W
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 150A
- Factory Lead Time :
- 26 Weeks
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 88W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- HTS Code :
- 8541.29.00.75
- Fall Time (Typ) :
- 43 ns
- Rise Time :
- 68ns
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Published :
- 2010
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1152pF @ 25V
- Continuous Drain Current (ID) :
- 710mA
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Avalanche Energy Rating (Eas) :
- 58 mJ
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 25A, 10V
- Turn-Off Delay Time :
- 83 ns
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 14 ns
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Max Dual Supply Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- BUK7230-55A

N-Channel Tape & Reel (TR) 30m Ω @ 25A, 10V ±20V 1152pF @ 25V TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7230-55A,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 58 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1152pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 83 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 150A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 55V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7230-55A,118 Features
the avalanche energy rating (Eas) is 58 mJ
a continuous drain current (ID) of 710mA
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 83 ns
based on its rated peak drain current 150A.
BUK7230-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7230-55A,118 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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