BU806

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 50mA, 5A

Transistor Element Material :

SILICON

Configuration :

Darlington

Power - Max :

60W

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Terminal Form :

THROUGH-HOLE

JESD-609 Code :

e0

Series :

--

Reach Compliance Code :

not_compliant

Operating Temperature :

-65°C ~ 150°C (TJ)

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

400V

RoHS Status :

Non-RoHS Compliant

Pin Count :

3

Transistor Type :

NPN

Collector-Emitter Voltage-Max :

200V

Operating Temperature (Max) :

150°C

Polarity/Channel Type :

NPN

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Terminal Position :

Single

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

--

Pbfree Code :

icon-pbfree no

Terminal Finish :

Tin/Lead (Sn/Pb)

Frequency - Transition :

--

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Collector Current-Max (IC) :

8A

Supplier Device Package :

TO-220-3

Power Dissipation-Max (Abs) :

60W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Number of Terminals :

3

Current - Collector (Ic) (Max) :

8A

Packaging :

Bulk