BU806
- Mfr.Part #
- BU806
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 200V 8A TO220-3
- Stock
- 41,803
- In Stock :
- 41,803
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 5A
- Transistor Element Material :
- SILICON
- Configuration :
- Darlington
- Power - Max :
- 60W
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e0
- Series :
- --
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Transistor Type :
- NPN
- Collector-Emitter Voltage-Max :
- 200V
- Operating Temperature (Max) :
- 150°C
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- --
- Pbfree Code :
- icon-pbfree no
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Frequency - Transition :
- --
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-220AB
- Collector Current-Max (IC) :
- 8A
- Supplier Device Package :
- TO-220-3
- Power Dissipation-Max (Abs) :
- 60W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- Number of Terminals :
- 3
- Current - Collector (Ic) (Max) :
- 8A
- Packaging :
- Bulk
- Datasheets
- BU806
BU806 Documents

NPN -65°C ~ 150°C (TJ) 100µA 1 Elements SILICON NPN TO-220-3 Bulk Through Hole
BU806 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is --.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 50mA, 5A.The product comes in the supplier device package of TO-220-3.There is a setting of 200V for maximal collector-Emitter voltage.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.
BU806 Features
the DC current gain for this device is --
the vce saturation(Max) is 1.5V @ 50mA, 5A
the supplier device package of TO-220-3
BU806 Applications
There are a lot of Central Semiconductor
BU806 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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