BU806

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Mfr.Part #
BU806
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 200V 8A TO220
Stock
20,653
In Stock :
20,653

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminals :
3
Transistor Type :
NPN
Current - Collector (Ic) (Max) :
8A
Configuration :
Darlington
Power - Max :
60W
Supplier Device Package :
TO-220-3
Voltage - Collector Emitter Breakdown (Max) :
400V
Polarity/Channel Type :
NPN
Series :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Frequency - Transition :
--
HTS Code :
8541.29.00.95
Collector-Emitter Voltage-Max :
200V
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Mounting Type :
Through Hole
Package / Case :
TO-220-3
RoHS Status :
Non-RoHS Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
Operating Temperature :
-65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max) :
100μA
Collector Current-Max (IC) :
8A
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
--
Terminal Position :
Single
Power Dissipation-Max (Abs) :
60W
Pin Count :
3
JESD-609 Code :
e0
JEDEC-95 Code :
TO-220AB
Operating Temperature (Max) :
150°C
Terminal Finish :
Tin/Lead (Sn/Pb)
Packaging :
Bulk
Number of Elements :
1
Pbfree Code :
icon-pbfree no
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 50mA, 5A
Datasheets
BU806
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BU806 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C ~ 150°C (TJ), BU806 pinout, BU806 datasheet PDF, BU806 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BU806 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BU806


NPN -65°C ~ 150°C (TJ) 100µA 1 Elements SILICON NPN TO-220-3 Bulk Through Hole

BU806 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is --.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 50mA, 5A.The product comes in the supplier device package of TO-220-3.There is a setting of 200V for maximal collector-Emitter voltage.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.

BU806 Features


the DC current gain for this device is --
the vce saturation(Max) is 1.5V @ 50mA, 5A
the supplier device package of TO-220-3


BU806 Applications


There are a lot of Central Semiconductor
BU806 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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