BU323ZG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Max Power Dissipation :

150W

Packaging :

Tube

Frequency - Transition :

2MHz

Collector Emitter Saturation Voltage :

1.6V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Voltage - Rated DC :

35V

Current Rating :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

Max Collector Current :

10A

Number of Elements :

1

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2002

Number of Pins :

3

Package / Case :

TO-247-3

Operating Temperature :

-65°C~175°C TJ

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Contact Plating :

Tin

Case Connection :

COLLECTOR

Power Dissipation :

150W

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

350V

Lead Free :

Lead Free

Height :

16.2mm

Transistor Type :

NPN - Darlington

JESD-609 Code :

e3

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Width :

4.9mm

Transition Frequency :

2MHz

Length :

15.2mm

Current - Collector Cutoff (Max) :

100μA

hFE Min :

150

Factory Lead Time :

2 Weeks

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

350V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Polarity :

NPN