BU323ZG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100μA

Power Dissipation :

150W

Emitter Base Voltage (VEBO) :

6V

Operating Temperature :

-65°C~175°C TJ

Width :

4.9mm

Number of Pins :

3

Number of Terminations :

3

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

150

Max Power Dissipation :

150W

Packaging :

Tube

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

2MHz

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Height :

16.2mm

Current Rating :

10A

Voltage - Rated DC :

35V

Pin Count :

3

Collector Emitter Voltage (VCEO) :

350V

Package / Case :

TO-247-3

Surface Mount :

No

Collector Emitter Breakdown Voltage :

350V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Max Collector Current :

10A

Length :

15.2mm

Frequency - Transition :

2MHz

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2002

Collector Emitter Saturation Voltage :

1.6V

Contact Plating :

Tin

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Polarity :

NPN

Number of Elements :

1

Pbfree Code :

yes