BU323ZG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity :

NPN

Height :

16.2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

Factory Lead Time :

2 Weeks

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

TO-247-3

Frequency - Transition :

2MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

350V

Operating Temperature :

-65°C~175°C TJ

Length :

15.2mm

Power Dissipation :

150W

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Pins :

3

JESD-609 Code :

e3

Element Configuration :

Single

Max Collector Current :

10A

Contact Plating :

Tin

Number of Elements :

1

Pin Count :

3

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

150W

hFE Min :

150

Current Rating :

10A

Published :

2002

Current - Collector Cutoff (Max) :

100μA

Transistor Element Material :

SILICON

Surface Mount :

No

Collector Emitter Saturation Voltage :

1.6V

Number of Terminations :

3

REACH SVHC :

No SVHC

Radiation Hardening :

No

Voltage - Rated DC :

35V

Transistor Type :

NPN - Darlington

Emitter Base Voltage (VEBO) :

6V

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

350V

Transition Frequency :

2MHz

Width :

4.9mm

Time@Peak Reflow Temperature-Max (s) :

40