BU323Z

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Transition Frequency :

2MHz

Pin Count :

3

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

350V

Width :

4.9mm

Number of Terminations :

3

Surface Mount :

No

Max Power Dissipation :

150W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~175°C TJ

Current - Collector Cutoff (Max) :

100μA

Published :

2002

Number of Elements :

1

Length :

15.2mm

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Power Dissipation :

150W

Emitter Base Voltage (VEBO) :

6V

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

1.6V

Height :

16.2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

hFE Min :

150

Packaging :

Tube

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Radiation Hardening :

No

Factory Lead Time :

2 Weeks

Frequency - Transition :

2MHz

Peak Reflow Temperature (Cel) :

260

Current Rating :

10A

Voltage - Rated DC :

35V

Collector Emitter Breakdown Voltage :

350V

Pbfree Code :

yes

Transistor Type :

NPN - Darlington

JESD-609 Code :

e3

ECCN Code :

EAR99

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Max Collector Current :

10A