BU323Z

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Max Collector Current :

10A

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Max Power Dissipation :

150W

Width :

4.9mm

Emitter Base Voltage (VEBO) :

6V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JESD-609 Code :

e3

Number of Elements :

1

Collector Emitter Breakdown Voltage :

350V

Frequency - Transition :

2MHz

Power Dissipation :

150W

Published :

2002

Number of Terminations :

3

Length :

15.2mm

Voltage - Rated DC :

35V

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

10A

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Height :

16.2mm

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

REACH SVHC :

No SVHC

Surface Mount :

No

Case Connection :

COLLECTOR

Pin Count :

3

Transition Frequency :

2MHz

Mounting Type :

Through Hole

Packaging :

Tube

Collector Emitter Saturation Voltage :

1.6V

Lead Free :

Lead Free

Polarity :

NPN

hFE Min :

150

Package / Case :

TO-247-3

Collector Emitter Voltage (VCEO) :

350V

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

100μA

Operating Temperature :

-65°C~175°C TJ

Transistor Element Material :

SILICON

Transistor Type :

NPN - Darlington

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)