BTS282Z E3230

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T7

Number of Terminations :

7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Published :

2001

Packaging :

Tube

Drain to Source Voltage (Vdss) :

49V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

ECCN Code :

EAR99

Vgs (Max) :

±20V

Reference Standard :

AEC-Q101

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

80A

FET Feature :

Temperature Sensing Diode

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

RoHS Status :

RoHS Compliant

Surface Mount :

No

Drain-source On Resistance-Max :

0.0095Ohm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Package / Case :

TO-220-7

Avalanche Energy Rating (Eas) :

2000 mJ

Operating Temperature :

-40°C~175°C TJ

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

232nC @ 10V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

49V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

320A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 36A, 10V

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 240µA

Operating Mode :

ENHANCEMENT MODE

Series :

TEMPFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED