BTS244Z E3062A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Case Connection :

DRAIN

Series :

TEMPFET®

Drain to Source Voltage (Vdss) :

55V

Avalanche Energy Rating (Eas) :

1650 mJ

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Temperature Sensing Diode

Drain Current-Max (Abs) (ID) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

2660pF @ 25V

Drain-source On Resistance-Max :

0.018Ohm

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Pulsed Drain Current-Max (IDM) :

188A

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

13m Ω @ 19A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 130µA

Published :

1999

Power Dissipation-Max :

170W Tc

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

Surface Mount :

yes

Operating Temperature :

-40°C~175°C TJ

Reference Standard :

AEC-Q101

FET Type :

N-Channel

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G4

Reach Compliance Code :

Compliant

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)