BTS244ZE3062AATMA2
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- Mfr.Part #
- BTS244ZE3062AATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 35A TO263-5
- Stock
- 15,039
- In Stock ：
- 15,039
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 1.59999g
- Current Rating :
- 35A
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 70ns
- Supplier Device Package :
- PG-TO263-5-2
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Drain to Source Voltage (Vdss) :
- 55V
- Published :
- 2003
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Input Capacitance :
- 2.66nF
- Vgs(th) (Max) @ Id :
- 2V @ 130µA
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 13mOhm
- Lead Free :
- Contains Lead
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On Max :
- 13 mΩ
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 170W
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 19A, 10V
- FET Feature :
- Temperature Sensing Diode
- Radiation Hardening :
- No
- Factory Lead Time :
- 18 Weeks
- Max Dual Supply Voltage :
- 55V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 40 ns
- Power Dissipation-Max :
- 170W Tc
- Drain to Source Breakdown Voltage :
- 55V
- Series :
- TEMPFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 2660pF @ 25V
- Continuous Drain Current (ID) :
- 35A
- Halogen Free :
- Halogen Free
- Fall Time (Typ) :
- 25 ns
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~175°C TJ
- Max Operating Temperature :
- 175°C
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Min Operating Temperature :
- -40°C
- Voltage - Rated DC :
- 55V
- Number of Pins :
- 5
- Turn On Delay Time :
- 15 ns
- Datasheets
- BTS244ZE3062AATMA2
N-Channel Tape & Reel (TR) 13mOhm @ 19A, 10V ±20V 2660pF @ 25V 130nC @ 10V 55V TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
BTS244ZE3062AATMA2 Overview
A device's maximum input capacitance is 2660pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 13mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
BTS244ZE3062AATMA2 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 13mOhm
a 55V drain to source voltage (Vdss)
BTS244ZE3062AATMA2 Applications
There are a lot of Infineon Technologies
BTS244ZE3062AATMA2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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