BTS247Z E3062A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

180A

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

120W Tc

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Drain to Source Voltage (Vdss) :

55V

Qualification Status :

Not Qualified

Series :

TEMPFET®

Number of Elements :

1

Avalanche Energy Rating (Eas) :

1300 mJ

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 90µA

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Rds On (Max) @ Id, Vgs :

18m Ω @ 12A, 10V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Pin Count :

5

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 25V

FET Feature :

Temperature Sensing Diode

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Published :

2009

DS Breakdown Voltage-Min :

55V

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Temperature :

-40°C~175°C TJ

JESD-30 Code :

R-PSSO-G4

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

33A

Terminal Position :

Single

Drain-source On Resistance-Max :

0.028Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Vgs (Max) :

±20V