BST62,115
- Mfr.Part #
- BST62,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 1A SOT89
- Stock
- 105
- In Stock :
- 105
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-243AA
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- HTS Code :
- 8541.29.00.75
- Case Connection :
- COLLECTOR
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Polarity :
- PNP
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 1A
- Number of Pins :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Transition Frequency :
- 200MHz
- Base Part Number :
- BST62
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.3W
- Current - Collector Cutoff (Max) :
- 50nA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- PNP - Darlington
- Terminal Finish :
- Tin (Sn)
- Frequency - Transition :
- 200MHz
- Published :
- 2009
- Datasheets
- BST62,115
SOT89.jpg)
PNP - Darlington 150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BST62,115 Overview
DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.3V @ 500μA, 500mA.As a result, the part has a transition frequency of 200MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BST62,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz
BST62,115 Applications
There are a lot of Nexperia USA Inc.
BST62,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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