BST61,115
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- Mfr.Part #
- BST61,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 1A SOT89
- Stock
- 4,171
- In Stock ：
- 4,171
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Polarity :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP - Darlington
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 1.3W
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Max Power Dissipation :
- 1.3W
- Frequency - Transition :
- 200MHz
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA
- Base Part Number :
- BST61
- Max Breakdown Voltage :
- 60V
- Transition Frequency :
- 200MHz
- JESD-30 Code :
- R-PSSO-F3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1.3V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Datasheets
- BST61,115
SOT89.jpg)
PNP - Darlington 150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BST61,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
BST61,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BST61,115 Applications
There are a lot of Nexperia USA Inc.
BST61,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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