BSS192PH6327FTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

2.5mm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

250V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

72 ns

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 130µA

Mount :

Surface Mount

Published :

2002

Feedback Cap-Max (Crss) :

8 pF

Drain to Source Breakdown Voltage :

-250V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

-250V

Series :

SIPMOS®

Vgs (Max) :

±20V

Turn On Delay Time :

4.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

104pF @ 25V

Mounting Type :

Surface Mount

Fall Time (Typ) :

50 ns

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 10V

Length :

4.5mm

Element Configuration :

Single

Number of Pins :

3

Height :

1.5mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

12 Ω @ 190mA, 10V

ECCN Code :

EAR99

Package / Case :

TO-243AA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

190mA

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Power Dissipation-Max :

1W Ta

Terminal Form :

Flat

Power Dissipation :

1W

Rise Time :

5.2ns