BSS192,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.8V @ 1mA

HTS Code :

8541.21.00.75

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

Continuous Drain Current (ID) :

200mA

Feedback Cap-Max (Crss) :

15 pF

Surface Mount :

yes

Radiation Hardening :

No

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

0.2A

JESD-609 Code :

e3

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

560mW Ta 12.5W Tc

Drain to Source Breakdown Voltage :

240V

Transistor Application :

SWITCHING

Package / Case :

TO-243AA

Max Dual Supply Voltage :

-240V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Power Dissipation :

1W

Pin Count :

3

Number of Terminations :

3

FET Type :

P-Channel

Number of Elements :

1

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

12 Ω @ 200mA, 10V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Published :

2014

Operating Mode :

ENHANCEMENT MODE