BSS192,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.21.00.75

Number of Terminations :

3

Feedback Cap-Max (Crss) :

15 pF

Contact Plating :

Tin

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

240V

Continuous Drain Current (ID) :

200mA

FET Type :

P-Channel

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Number of Elements :

1

Power Dissipation-Max :

560mW Ta 12.5W Tc

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

-240V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

12 Ω @ 200mA, 10V

Drain Current-Max (Abs) (ID) :

0.2A

Package / Case :

TO-243AA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Power Dissipation :

1W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Published :

2014

ECCN Code :

EAR99

Pin Count :

3

Terminal Form :

Flat