BSS169L6906HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Drain to Source Voltage (Vdss) :

100V

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

68pF @ 25V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 7V

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

6Ohm

Continuous Drain Current (ID) :

170mA

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

7 pF

Mount :

Surface Mount

Rise Time :

2.7ns

Contact Plating :

Tin

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

ECCN Code :

EAR99

Number of Pins :

3

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

0.17A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1.8V @ 50µA

FET Feature :

Depletion Mode

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Power Dissipation-Max :

360mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)