BSS169L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

0V, 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

0.36 W

Power Dissipation (Max) :

360mW (Ta)

ECCN Code :

EAR99

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

PG-SOT23-3-5

HTS Code :

8541.21.00.95

Number of Terminals :

3

Drain Current-Max (Abs) (ID) :

0.17 A

Feedback Cap-Max (Crss) :

7 pF

Input Capacitance (Ciss) (Max) @ Vds :

68 pF @ 25 V

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

170mA (Ta)

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100 V

Operating Mode :

Depletion Mode

Series :

SIPMOS®

Qualification Status :

Not Qualified

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G3

Rds On (Max) @ Id, Vgs :

2.9Ohm @ 190mA, 10V

Drain-source On Resistance-Max :

6 Ω

FET Feature :

Depletion Mode

Package Shape :

RECTANGULAR

Package :

Bulk

Vgs(th) (Max) @ Id :

1.8V @ 50µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

100 V

Number of Elements :

1

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Manufacturer :

Infineon Technologies AG

Terminal Position :

Dual

Product Status :

Active

Subcategory :

FET General Purpose Power

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

2.8 nC @ 7 V

Technology :

MOSFET (Metal Oxide)

Pin Count :

3