BSS169H6906XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Mount :

Surface Mount

Vgs (Max) :

±20V

Terminal Position :

Dual

ECCN Code :

EAR99

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Pbfree Code :

yes

Drain-source On Resistance-Max :

6Ohm

Packaging :

Tape and Reel (TR)

Series :

SIPMOS™

Drain Current-Max (Abs) (ID) :

0.17A

Vgs(th) (Max) @ Id :

1.8V @ 50µA

FET Feature :

Depletion Mode

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 7V

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Continuous Drain Current (ID) :

170mA

Power Dissipation-Max :

360mW Ta

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

68pF @ 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Feedback Cap-Max (Crss) :

7 pF

Rise Time :

2.7ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V