BSS169H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Length :

2.9mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Radiation Hardening :

No

FET Feature :

Depletion Mode

Turn-Off Delay Time :

11 ns

Turn On Delay Time :

2.9 ns

Drain-source On Resistance-Max :

6Ohm

Power Dissipation :

360mW

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 7V

Width :

1.3mm

Mounting Type :

Surface Mount

Series :

SIPMOS®

Max Dual Supply Voltage :

100V

Pin Count :

3

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Published :

2011

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Vgs (Max) :

±20V

JESD-609 Code :

e3

Terminal Position :

Dual

Number of Terminations :

3

Rise Time :

2.7ns

Continuous Drain Current (ID) :

170mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

68pF @ 25V

Feedback Cap-Max (Crss) :

7 pF

Contact Plating :

Tin

ECCN Code :

EAR99

Number of Pins :

3

Lead Free :

Lead Free

Power Dissipation-Max :

360mW Ta

Number of Elements :

1