BSS169H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Width :

1.3mm

ECCN Code :

EAR99

Power Dissipation-Max :

360mW Ta

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Height :

1mm

Turn On Delay Time :

2.9 ns

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 7V

Lead Free :

Lead Free

Series :

SIPMOS®

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Continuous Drain Current (ID) :

170mA

Factory Lead Time :

10 Weeks

Drain-source On Resistance-Max :

6Ohm

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

68pF @ 25V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

7 pF

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Halogen Free :

Halogen Free

Published :

2011

Terminal Position :

Dual

Transistor Element Material :

SILICON

Number of Terminations :

3

Rise Time :

2.7ns

Max Dual Supply Voltage :

100V

JESD-609 Code :

e3

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Radiation Hardening :

No

Number of Pins :

3

FET Feature :

Depletion Mode

FET Type :

N-Channel

Length :

2.9mm

Number of Elements :

1

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Turn-Off Delay Time :

11 ns

Power Dissipation :

360mW