BSS159NL6906

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

Depletion Mode

Series :

SIPMOS®

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 5V

Mount :

Surface Mount

Terminal Position :

Dual

ECCN Code :

EAR99

Factory Lead Time :

17 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2006

Continuous Drain Current (ID) :

230mA

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 160mA, 10V

Reference Standard :

AEC-Q101

Contact Plating :

Tin

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

44pF @ 25V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

5 pF

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2.4V @ 26μA

Number of Pins :

3

Rise Time :

2.9ns

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

360mW Ta