BSS159NH6906XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 5V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Terminations :

3

Series :

SIPMOS®

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 160mA, 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

2.4V @ 26μA

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

Depletion Mode

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

360mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

44pF @ 25V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

60V

Published :

2006

HTS Code :

8541.21.00.95

Feedback Cap-Max (Crss) :

5.9 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

230mA

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Rise Time :

2.9ns