BSS159NH6327XTSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Mount :

Surface Mount

Turn-Off Delay Time :

9 ns

FET Feature :

Depletion Mode

Vgs(th) (Max) @ Id :

2.4V @ 26μA

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Rise Time :

2.9ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

39pF @ 25V

REACH SVHC :

No SVHC

Number of Pins :

3

FET Type :

N-Channel

Terminal Position :

Dual

Length :

2.9mm

Power Dissipation-Max :

360mW Ta

Terminal Finish :

Tin (Sn)

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Series :

SIPMOS®

ECCN Code :

EAR99

Number of Terminations :

3

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 5V

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 160mA, 10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Pbfree Code :

yes

Pin Count :

3

Width :

1.3mm

Number of Elements :

1

Radiation Hardening :

No

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

3.1 ns

Height :

1.1mm

Factory Lead Time :

10 Weeks

Threshold Voltage :

-2.8V

Feedback Cap-Max (Crss) :

5.9 pF

Continuous Drain Current (ID) :

230mA

Max Dual Supply Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

360mW

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Published :

2001