BSS159NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Dual

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

5.9 pF

Input Capacitance (Ciss) (Max) @ Vds :

44pF @ 25V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

0.23A

Packaging :

Tape and Reel (TR)

FET Feature :

Depletion Mode

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 5V

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 160mA, 10V

Vgs(th) (Max) @ Id :

2.4V @ 26μA

Power Dissipation-Max :

360mW Ta

JESD-30 Code :

R-PDSO-G3