BSS159N E6906

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Published :

2006

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

44pF @ 25V

Vgs(th) (Max) @ Id :

2.4V @ 26μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

60V

Terminal Position :

Dual

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

5.9 pF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Surface Mount :

yes

HTS Code :

8541.21.00.95

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3

Qualification Status :

Not Qualified

Series :

SIPMOS®

FET Type :

N-Channel

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

0.23A

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Power Dissipation-Max :

360mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Terminal Form :

Gull wing

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 160mA, 10V

Transistor Element Material :

SILICON

FET Feature :

Depletion Mode

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 5V