BSS159N E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

44pF @ 25V

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PDSO-G3

HTS Code :

8541.21.00.95

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Terminal Position :

Dual

Series :

SIPMOS®

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 5V

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Transistor Element Material :

SILICON

FET Feature :

Depletion Mode

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 160mA, 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

60V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

5.9 pF

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Published :

2006

Power Dissipation-Max :

360mW Ta

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.23A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Vgs(th) (Max) @ Id :

2.4V @ 26μA