BSS139H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Contact Plating :

Tin

Width :

3.05mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rise Time :

5.4ns

Number of Channels :

1

Threshold Voltage :

-1.4V

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

250V

Power Dissipation-Max :

360mW Ta

Continuous Drain Current (ID) :

40mA

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

-1.4 V

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Max Dual Supply Voltage :

250V

Mount :

Surface Mount

Termination :

SMD/SMT

FET Feature :

Depletion Mode

Power Dissipation :

360mW

RoHS Status :

ROHS3 Compliant

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

1V @ 56μA

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 5V

Number of Pins :

3

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

76pF @ 25V

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

14 Ω @ 100μA, 10V

Number of Terminations :

3