BSS139 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

250V

Input Capacitance (Ciss) (Max) @ Vds :

76pF @ 25V

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

250V

Drain-source On Resistance-Max :

30Ohm

Rds On (Max) @ Id, Vgs :

14 Ω @ 0.1mA, 10V

RoHS Status :

RoHS Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Feedback Cap-Max (Crss) :

3.3 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 56μA

Drain Current-Max (Abs) (ID) :

0.1A

Transistor Element Material :

SILICON

Number of Elements :

1

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.21.00.95

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 5V

Series :

SIPMOS®

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Power Dissipation-Max :

360mW Ta

FET Feature :

Depletion Mode

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE