BSS138TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Published :

2012

Drain to Source Breakdown Voltage :

50V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

15 ns

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Voltage - Rated DC :

50V

Terminal Finish :

MATTE TIN

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

200mA

Terminal Position :

Dual

Power Dissipation-Max :

300mW Ta

Mount :

Surface Mount

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

200mA

Fall Time (Typ) :

10 ns

Weight :

7.994566mg

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Feedback Cap-Max (Crss) :

8 pF

JESD-609 Code :

e3

Width :

1.3mm

REACH SVHC :

No SVHC

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

360mW

Number of Elements :

1

Number of Channels :

1

Height :

1mm

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.2A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 220mA, 10V

Length :

2.9mm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V