BSS138NL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

230mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation-Max :

360mW Ta

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 230mA, 10V

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 25V

Terminal Form :

Gull wing

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

60V

Mount :

Surface Mount

Terminal Position :

Dual

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation :

360mW

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V