BSS138NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.4V @ 26μA

Series :

SIPMOS™

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 230mA, 10V

Number of Elements :

1

Factory Lead Time :

10 Weeks

Height :

1mm

Element Configuration :

Single

Terminal Form :

Gull wing

Turn-Off Delay Time :

6.7 ns

HTS Code :

8541.21.00.95

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Power Dissipation-Max :

360mW Ta

ECCN Code :

EAR99

Width :

1.3mm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

2.3 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lead Free :

Lead Free

FET Type :

N-Channel

Continuous Drain Current (ID) :

230mA

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Length :

2.9mm

Published :

2009

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rise Time :

3ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 25V

Mounting Type :

Surface Mount

Mount :

Surface Mount